IMB8A

Transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A General purpose (dual digital transistors) EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A !Features 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuit EMA4 / UMA4N (3) (2) (1) FMA4A (3) (4) (5) EMB4 / UMB4N (3) (2) (1) IMB4A (4) (5) (6) UMB8N (3) (2) (1) IMB8A (4) (5) (6) R1 R1 R1 R1 R1 R1 R1 R1 R1 (4) (5) (2) (1) (4) (5) (6) (3) R1 (2) (1) R1 (4) (5) (6) R1 (3) (2) (1) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation EMA4 / UMA4N / EMB4 / UMB4N / UMB8N FMA4A / IMB4A / IMB8A Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits −50 −50 −5 −100 150(TOTAL) 300(TOTAL) 150 −55~+150 Unit V V V mA mW ∗1 ∗2 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. °C °C !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1 Min. −50 −50 −5 − − − 100 − 7 Typ. − − − − − − 250 250 10 Max. − − − −0.5 −0.5 −0.3 600 − 13 Unit V V V µA µA V − MHz kΩ IC=−50µA IC=−1...