DatasheetsPDF.com

IMH1A Datasheet

Part Number IMH1A
Manufacturers Rohm
Logo Rohm
Description Dual Digital Transistor
Datasheet IMH1A DatasheetIMH1A Datasheet (PDF)

Transistors EMG1 / EMH1 / UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A General purpose (dual digital transistors) EMG1 / EMH1 / UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A !Features 1) Two DTC124E chips in a EMT or UMT or SMT package. !Circuit schematic EMG1 / UMG1N (3) (2) (1) FMG1A (3) (4) (5) EMH1 / UMH1N (3) (2) (1) IMH1A (4) (5) (6) UMH5N (3) (2) (1) IMH5A (4) (5) (6) R1 R1 R2 R2 R1 R1 R2 R2 R1 R2 R1 R2 R1 R2 R2 R1 (1) (4) (5) (6) R1 R2 R2 R1 (3) (2) (1) R2 (4) (5)/(6) (2).

  IMH1A   IMH1A






Part Number IMH15A
Manufacturers Rohm
Logo Rohm
Description General purpose
Datasheet IMH1A DatasheetIMH15A Datasheet (PDF)

www.DataSheet4U.com EMH15 / IMH15A Transistors General purpose (dual digital transistors) EMH15 / IMH15A zFeatures 1) Two DTC114T chips in a EMT or SMT package. zExternal dimensions (Unit : mm) IMH15A zEquivalent circuit EMH15 (6) (5) (4) (4) (5) (6) (4) 1.6 R1 R1 0.15 2.8 0.8 0~0.1 (4) (5) (6) (3) (2) (1) (3) IMH15A R1 (1) (2) (3) (3) R1 (2) (1) 0.3Min. ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltag.

  IMH1A   IMH1A







Part Number IMH14A
Manufacturers Rohm
Logo Rohm
Description NPN 100mA 50V Complex Digital Transistors
Datasheet IMH1A DatasheetIMH14A Datasheet (PDF)

UMH14N / IMH14A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Outline Parameter Tr1 and Tr2 UMT6 (6) SMT6 (4) VCEO 50V (5) (4) (5) (6) IC 100mA R1 47k (1) (2) (3) UMH14N SOT-363 (SC-88) for (3) (2) (1) IMH14A SOT-457 (SC-74) Features 1) Built-In Biasing Resistors. d 2) Two DTC144T chips in one package. 3) Built-in bias resistors enable the configuration of e an inverter circuit without connecting external d input resistors (see inn.

  IMH1A   IMH1A







Part Number IMH11A
Manufacturers Rohm
Logo Rohm
Description NPN Digital Transistor
Datasheet IMH1A DatasheetIMH11A Datasheet (PDF)

EMH11 / UMH11N / IMH11A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 50V 100mA 10k 10k Features 1) Built-In Biasing Resistors, R1 = R2 = 10k. 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow neg.

  IMH1A   IMH1A







Part Number IMH10A
Manufacturers Rohm
Logo Rohm
Description Dual Digital Transistor
Datasheet IMH1A DatasheetIMH10A Datasheet (PDF)

EMH10 / UMH10N / IMH10A Transistors General purpose (dual digital transistors) EMH10 / UMH10N / IMH10A zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Units : mm) EMH10 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : H10 1..

  IMH1A   IMH1A







Dual Digital Transistor

Transistors EMG1 / EMH1 / UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A General purpose (dual digital transistors) EMG1 / EMH1 / UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A !Features 1) Two DTC124E chips in a EMT or UMT or SMT package. !Circuit schematic EMG1 / UMG1N (3) (2) (1) FMG1A (3) (4) (5) EMH1 / UMH1N (3) (2) (1) IMH1A (4) (5) (6) UMH5N (3) (2) (1) IMH5A (4) (5) (6) R1 R1 R2 R2 R1 R1 R2 R2 R1 R2 R1 R2 R1 R2 R2 R1 (1) (4) (5) (6) R1 R2 R2 R1 (3) (2) (1) R2 (4) (5)/(6) (2) (1) (4) R1 (5) (6) (3) R2 R1 (2) !Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Output current Power dissipation EMG1 / EMH1 / UMG1N / UMH1N / UMG5N FMG1A / IMH1A / IMH5A Symbol VCC VIN IO Pd Tj Tstg Limits 50 40 −10 30 150(TOTAL) 300(TOTAL) 150 −55~+150 Unit V V mA mW ∗1 ∗2 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. °C °C !Electrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI R1 R2 / R1 Min. − 3 − − − 56 15.4 0.8 Typ. − − 0.1 − − − 22 1 Max. 0.5 − 0.3 0.36 0.5 − 28.6 1.2 Unit V V mA µA − kΩ − Conditions VCC=5V, IO=100µA VO=0.2V, IO=5mA IO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA − − !Package, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMG1 EMT5 G1 T2R 8000 E.


2005-04-05 : D8237A    D8237A    K9K1G08U0B    KS88C0916    KS88C2064    KS88C2148    KS88C2416    KS88C2432    KS88C4404    KS88C4504   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)