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IMW120R220M1H
Silicon Carbide MOSFET
Description
IMW120R220M1H IMW120R220M1H CoolSiC™ 1200V SiC Trench
MOSFET
Silicon Carbide
MOSFET
Features Very low switching losses Gate pin 1 Threshold-free on state characteristic Wide gate-source
voltage
range Benchmark gate threshold
voltage
, VGS(th) = 4.5V 0V turn-off gate
voltage
for easy and simple gate drive Fully controllable dV/dt Robus...
Infineon
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