IMX9T110

www.DataSheet4U.com IMX9 Transistors General purpose transistor (isolated dual transistors) IMX9 zFeatures 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Units : mm) 2.9±0.2 1.9±0.2 0.95 0.95 (4) (5) (6) 1.1 +0.2 −0.1 0.8±0.1 +0.2 −0.1 2.8±0.2 0~0.1 (3) zStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. All terminals have same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X9 zAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 25 20 12 500 300(TOTAL) 150 −55~+150 Unit V V V mA mW °C °C zEquivalent circuit (4) (5) (6) Tr1 Tr2 ∗ (3) (2) (1) ∗ 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron Min. 25 20 12 − − − 560 − − − Typ. − − − − − 0.18 − 350 8 0.8 Max. − − ...