IMZA65R107M1H

IMZA65R107M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency. Features Optimizedswitchingbehaviorathighercurrents CommutationrobustfastbodydiodewithlowQrr Superiorgateoxidereliability Bestthermalconductivityandbehavior LowerRDS(on)andpulsecurrentdependencyontemperature Increasedavalanchecapability Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V) Kelvinsourceprovidesupto4timeslowerswitchinglosses Benefits Uniquecombinationofhighperformance,highreliabilityandeaseofuse Easeofuseandintegration Suitablefortopologieswithcontinuoushardcommutation Higherrobustnessandsystemreliability Efficiencyimprovement Reducedsystemsizeleadingtohigherpowerdensity Potentialapplications SMPS UPS(uninterruptablepowersupplies) SolarPVinverters EVcharginginfrastructure Energystorageandbatteryformation ClassDamplifiers Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications PG-TO247-4-3 Tab 1 2 34 Drain Pin 1, Tab Gate Pin 4 Dr...