IN24LC04B

w U 4 tCMOS Serial EEPROMs IN24LC04B/08B 4K/8K 2.5V e e h S DESCRIPTION a t a IN24LC04B/08B 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x .D withisaatwo 8 bit memory serial interface. Low voltage design permits operation down to 2.5 volts with standby and w currents of only 5µwire active A and 1mA respectively. The IN24LC04B/08B also has a page-write capability for up to 16 w bytes of data. The IN24LC04B/08B is available in the standard 8-pin DIP. FEATURES m o .c TECHNICAL DATA Single supply with operation down to 2.5V Low power CMOS technology - 1 mA active current typical - 10 µA standby current typical at 5.5V - 5 µA standby current typical at 3.0V Organized as two or four blocks of 256 bytes (2x256x8) and (4x256x8) Two wire serial interface bus, I2C compatible Schmitt trigger, filtered inputs for noise suppression Output slope control to eliminate ground bounce 100 kHz (2.5V) and 400 kHz (5V) compatibility Self-timed write cycle (including auto-erase) Page-write buffer for up to 16 bytes 2 ms typical write cycle time for page-write Hardware write protect for entire memory Can be operated as a serial ROM Factory programming (QTP) available ESD protection > 4,000V 1,000,000 ERASE/WRITE cycles guaranteed* Data retention > 200 years 8-pin DIP Temperature range -40 to +85 C o w w w t a .D S a e h U 4 t e .c m o PACKAGE TA = -40 ... +85 °C PINNING Function Ground Serial Addres...