IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE (...
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE (SPI).
DESCRIPTION
The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface. *The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI). The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF: for IN25АА020N, IN25АА020D for IN25АА040N, IN25АА040D
2048 bit, 4096 bit;
- Maximum clock frequency, fC: for 4,5 V ≤ UCC ≤ 5,5 V for 2,5 V ≤ UCC ≤ 5,5 V for 1,8 V ≤ UCC ≤ 5,5 V - Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC for UCC = 2,5 V, UIL = 0 V, UIH = UCC
3 MHz; 2 MHz; 1 MHz;
5,0 uA 1,0 uA;
- Maximum read current, IOCCR :
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles; - Write protection block protect none, 1/4, 1/2, or all of storage
array;
- Power on/off data protection circuitry;
- Supply
voltage UCC 1,8 … 5,5 V; - Temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX DIP
8
1 D SUFFIX 8 SOIC
1
Pin Name
CS SO
WP GND
SI SCK
HOLD VCC
Func...