OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC...
OptiMOS(TM)3 Power-Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
IPA028N08N3 G
IPA028N08N3 G
Product Summary VDS RDS(on),max ID
80 V 2.8 mW 89 A
Package
PG-TO-220-FP
Marking
028N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
89
T C=100 °C
62
Pulsed drain current3)
I D,pulse T C=25 °C
352
Avalanche energy, single pulse4) E AS I D=89 A, R GS=25 W
1430
Gate source
voltage
V GS
±20
Power dissipation
P tot T C=25 °C
42
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55...