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IPA086N10N3G Datasheet

Part Number IPA086N10N3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description MOSFET
Datasheet IPA086N10N3G DatasheetIPA086N10N3G Datasheet (PDF)

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target.

  IPA086N10N3G   IPA086N10N3G






Part Number IPA086N10N3
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet IPA086N10N3G DatasheetIPA086N10N3 Datasheet (PDF)

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target.

  IPA086N10N3G   IPA086N10N3G







Part Number IPA086N10N3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPA086N10N3G DatasheetIPA086N10N3 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Dr.

  IPA086N10N3G   IPA086N10N3G







MOSFET

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA086N10N3 G 100 V 8.6 mW 45 A Package Marking PG-TO220-FP 086N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E .


2011-03-27 : A70QS800-4    A70QS    A70QS-4    A70QS-4K    A70QS    A70QS-4    A70QS-4K    A70QS500-4K    AX3003    MQ7   


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