IPA126N10N3G

IPA126N10N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 12.6 35 V mΩ A Ideal for high-frequency switching and synchronous rectification Type IPA126N10N3 G Package Marking PG-TO220-FP 126N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 www.DataSheet4U.com 1) 2) Value 35 25 140 90 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=35 A, R GS=25 Ω mJ V W °C T C=25 °C 33 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.2 page 1 2009-07-09 IPA126N10N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC 4.5 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=45 µA V DS=100 V, V GS=0 V, T j=25 °C V DS=100 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-...