IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Type
IPA180N10N3 G
100 V 18 mW 28 A
Package Marking
PG-TO220-FP 180N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=28 A, R GS=25 W
Gate source
voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
Unit
28
A
20
112
59
mJ
±20
V
30
W
-55 ... 175
°C
55/175/56
Rev. 2.3
page 1
2013-08-27
IPA180N10N3 G
Parameter
Symbol Conditions
Thermal characteristics Thermal resistance, junction - case R thJC
min.
Values typ.
Unit max.
-
-
5 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D=1 mA
100
V GS(th) V DS=V GS, I D=35 µA
2
I DSS
V DS=100 V, V...
