isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggednes...
isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
IPA50R650CE
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
500
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
9 5.7
19
PD
Total Dissipation
27.2
Tj
Operating Junction Temperature
-40~150
Tstg
Storage Temperature
-40~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 4.6 80
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IPA50R650CE
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold
Voltage
VDS=±20V; ID=0.75mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=1.8A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V
VSDF
Diode forward
voltage
ISD=2.3A, VGS = 0 V
500
V
2.5
3.5
V
590 650
mΩ
±0.1 μA
1
μA
0.84
V
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