IPA60R165CP

IPA60R165CP CoolMOSTM Power Transistor Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.165 Ω 39 nC PG-TO220-3-31 CoolMOS CP is specially designed for: Hard switching SMPS topologies Type IPA60R165CP Package PG-TO220-3-31 Ordering Code SP000096437 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage www.DataSheet4U.com I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque P tot T j, T stg M2.5 screws T C=25 °C T C=25 °C I D=7.9 A, V DD=50 V I D=7.9 A, V DD=50 V Value 21 13 61 522 0.79 7.9 50 ±20 ±30 34 -55 ... 150 50 W °C Ncm A V/ns V mJ Unit A Rev. 1.3 page 1 2005-12-22 IPA60R165CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse curren 3) Reverse diode d v /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 21 61 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteris...