IPA60R280E6

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R280E6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600V CoolMOS" E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.28 43 40 3.7 500 V ! nC A µJ A/µs drain pin 2 gate pin 1 source pin 3 Type / Ordering Code IPW60R280E6 IPP60R280E6 IPA6...