Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input r...
Isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
IPA60R299CP
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
11 7
34
PD
Total Dissipation @TC=25℃
33
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.8 80
UNIT ℃/W ℃/W
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Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IPA60R299CP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=0.25mA
600
V
VGS(th)
Gate Threshold
Voltage
VDS= VGS; ID=0.44mA
2.5
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=6.6A
270 299
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS= 600V; VGS= 0V;Tj=25℃ VDS= 600V; VGS= 0V; Tj=150℃
Diode forward volt...
