IPD60R650CE,IPA60R650CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvolta...
IPD60R650CE,IPA60R650CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhigh
voltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunction
MOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
PG-TO220FP
2 1
3
Drain Pin 2, Tab
Features
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications
Gate Pin 1
Source Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:For
MOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. Note2:*6R650CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
mΩ
Id. 9.9 A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode IPD60R650CE IPA60R650CE
Package PG-TO 252 PG-TO 220 FullPAK
Mark...