INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F Package ·Drain Source Voltage-
: VDSS=60...
INCHANGE Semiconductor
Isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-220F Package ·Drain Source
Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.95Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
4.4 2.8
A
IDM
Drain Current-Single Pulsed
12
A
PD
Total Dissipation @TC=25℃
26
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth(ch-c) Channel-to-case thermal resistance
4.9
℃/W
Rth(ch-a) Channel-to-ambient thermal resistance
80
℃/W
IPA60R950C6
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
Isc N-Channel
MOSFET Transistor
IPA60R950C6
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
BVDSS Drain-Source Breakdown
Voltage VGS=0V; ID=0.25mA
600
V
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=0.13mA
2.5
3
3.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=1.5A
0.86 0.95
Ω
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V;Tj=25℃ VDS= 600V; VGS= 0V; Tj=150℃
VSDF
...
