IPA90R1K2C3

IPA90R1K2C3 CoolMOS™ Power Transistor Features Lowest figure-of-merit R ON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 1.2 28 V Ω nC PG-TO220 FP CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPA90R1K2C3 Package PG TO220 FP Marking 9R1K2C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Value 5.1 3.2 10 68 0.31 0.92 Unit A Pulsed drain current 3) Avalanche energy, single pulse Avalanche energy, repetitive t AR 3),4) Avalanche current, repetitive t AR 3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V mJ A V/ns V V DS=0...400 V static AC (f>1 Hz) 50 ±20 ±30 31 -55 ... 150 Power dissipation Operating and storage temperature Mounting torque Rev. 1.0 P tot T J, T stg T C=25 °C W °C Ncm 2008-07-29 M2.5 screws page 1 50 www.DataSheet4U.net IPA90R1K2C3 Maximum ratings, at T J =25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current Reverse diode dv/dt 3) 5) 2) Symbol Conditions IS I S,pulse dv/dt T C=25 °C Value 2.8 11 4 Unit A V/ns Parameter ...