IPB009N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
Features
•MOSFETforORingandUninterruptiblePowerSupply •Qua...
IPB009N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
Features
MOSFETforORingandUninterruptiblePowerSupply QualifiedaccordingtoJEDEC1)fortargetapplications N-channel Logiclevel Ultra-lowon-resistanceRDS(on) 100%Avalanchetested Pb-freeplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
0.95
mΩ
ID 180 A
D²-PAK7pin
1 7
tab
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPB009N03L G
Package PG-TO263-7
Marking 009N03L
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....