IPB009N03LG

IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V Features MOSFETforORingandUninterruptiblePowerSupply QualifiedaccordingtoJEDEC1)fortargetapplications N-channel Logiclevel Ultra-lowon-resistanceRDS(on) 100%Avalanchetested Pb-freeplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.95 mΩ ID 180 A D²-PAK7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB009N03L G Package PG-TO263-7 Marking 009N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....