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IPB019N06L3G Datasheet

Part Number IPB019N06L3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet IPB019N06L3G DatasheetIPB019N06L3G Datasheet (PDF)

Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G Product Summary V DS R DS(on),max ID 60 1.9 120 V mΩ A Package.

  IPB019N06L3G   IPB019N06L3G






Part Number IPB019N06L3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPB019N06L3G DatasheetIPB019N06L3 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPB019N06L3 ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-.

  IPB019N06L3G   IPB019N06L3G







Part Number IPB019N06L3
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPB019N06L3G DatasheetIPB019N06L3 Datasheet (PDF)

Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G Product Summary V DS R DS(on),max ID 60 V 1.9 mΩ 120 A.

  IPB019N06L3G   IPB019N06L3G







Power Transistor

Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G Product Summary V DS R DS(on),max ID 60 1.9 120 V mΩ A Package Marking PG-TO-263-3 019N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 120 120 480 634 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=100 A, R GS=25 Ω mJ V W °C T C=25 °C 250 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 269 A. See figure 3 for more detailed information See figure 13 for more detailed information www.DataSheet4U.net Rev. 2.2 page 1 2009-11-16 IPB019N06L3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area 5) 0.6 62 40 K/W Electrical ch.


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