IPB180N06S4-H1

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID IPB180N06S4-H1 Product Summary V DS R DS(on),max ID 60 V 1.7 mΩ 180 A PG-TO263-7-3 Type IPB180N06S4-H1 Package PG-TO263-7-3 Marking 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=90A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 180 180 720 700 180 ±20 250 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 0.60 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=200µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C...