IPB200N25N3G

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID 250 20 64 V mW A Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package Marking PG-TO263-3 200N25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 64 46 256 320 10 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=47 A, R GS=25 W mJ kV/µs V W °C T C=25 °C 300 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.4 page 1 2011-07-14 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.5 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Stat...