DatasheetsPDF.com

IPB60R160C6 Datasheet

Part Number IPB60R160C6
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description MOSFET
Datasheet IPB60R160C6 DatasheetIPB60R160C6 Datasheet (PDF)

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R160C6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The.

  IPB60R160C6   IPB60R160C6






Part Number IPB60R160C6
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPB60R160C6 DatasheetIPB60R160C6 Datasheet (PDF)

Isc N-Channel MOSFET Transistor IPB60R160C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 23.8 .

  IPB60R160C6   IPB60R160C6







MOSFET

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R160C6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 drain pin 2 gate pin 1 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.16 75 70 6 500 V ! nC A µJ A/µs Type / Ordering Code IPW60R160C6 IPB60R1.


2011-08-01 : IPA075N15N3G    IPA093N06N3    IPA105N15N3G    IPA65R280C6    IPA65R280E6    IPA65R310CFD    IPA65R380C6    IPA65R380E6    IPA65R420CFD    IPA65R600C6   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)