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IPB60R190C6 Datasheet

Part Number IPB60R190C6
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPB60R190C6 DatasheetIPB60R190C6 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB60R190C6 ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapter, LCD & PDP TV ·Lighting, Server, Telecom and UPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

  IPB60R190C6   IPB60R190C6






Part Number IPB60R190C6
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description MOSFET
Datasheet IPB60R190C6 DatasheetIPB60R190C6 Datasheet (PDF)

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R190C6 DataSheet Rev.2.3 Final PowerManagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th.

  IPB60R190C6   IPB60R190C6







N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB60R190C6 ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapter, LCD & PDP TV ·Lighting, Server, Telecom and UPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 20.2 12.8 59 PD Total Dissipation 151 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB60R190C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.63mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9.5A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSDF .


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