IPB60R385CP
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • High peak ...
IPB60R385CP
CoolMOSTM Power Transistor
Features Lowest figure-of-merit R ON x Qg Ultra low gate charge High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.385 Ω 17 nC
PG-TO263
CoolMOS CP is specially designed for: Hard switching SMPS topologies
Type IPB60R385CP
Package PG-TO263
Ordering Code SP000228365
Marking 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3)
MOSFET dv /dt ruggedness Gate source
voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V Value 9.0 5.7 27 227 0.3 3 50 ±20 ±30 83 -55 ... 150 W °C A V/ns V mJ Unit A
www.DataSheet4U.net
Rev. 2.0
page 1
2006-06-06
IPB60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footpr...