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IPB65R420CFD Datasheet

Part Number IPB65R420CFD
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPB65R420CFD DatasheetIPB65R420CFD Datasheet (PDF)

Isc N-Channel MOSFET Transistor IPB65R420CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 8.7 .

  IPB65R420CFD   IPB65R420CFD






Part Number IPB65R420CFD
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description MOSFET
Datasheet IPB65R420CFD DatasheetIPB65R420CFD Datasheet (PDF)

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  IPB65R420CFD   IPB65R420CFD






N-Channel MOSFET

Isc N-Channel MOSFET Transistor IPB65R420CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 8.7 5.5 27 PD Total Dissipation @TC=25℃ 83.3 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IPB65R420CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 650 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.34mA 3.5 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3.4A 378 420 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS=0V Drain-Source Leakage Current VDS=650V; VGS= 0V;Tj=25℃ VDS=650V; VGS= 0V;Tj=150℃ Diode forward voltage ISD=5.2A, VGS = 0 V ±0.1 μA 5 600 μA 0.9 V NOTICE: ISC reserves the rights to make changes.


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