IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement ...
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05
OptiMOS® Power-Transistor
Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested PG-TO263-3-2
Product Summary V DS R DS(on),max (SMD version) ID 55 4.5 80 V mΩ A
PG-TO220-3-1
PG-TO262-3-1
Type IPB80N06S2L-05 IPP80N06S2L-05 IPI80N06S2L-05
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Ordering Code SP0002-19004 SP0002-19000 SP0002-19002
Marking 2N06L05 2N06L05 2N06L05
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source
voltage4) Power dissipation Operating and storage temperature I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 80 80 320 800 ±20 300 -55 ... +175 mJ V W °C Unit A
Rev. 1.0
page 1
2006-03-13
http://www.Datasheet4U.com
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown
voltage Gate threshold
voltage V (BR)DSS V GS=0 V, ...