Power-Transistor. IPB90N04S4-02 Datasheet

IPB90N04S4-02 Datasheet PDF


Part Number

IPB90N04S4-02

Description

Power-Transistor

Manufacture

Infineon

Total Page 9 Pages
Datasheet
Download IPB90N04S4-02 Datasheet



IPB90N04S4-02
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB90N04S4-02
IPI90N04S4-02, IPP90N04S4-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
2.1 m
90 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB90N04S4-02
IPI90N04S4-02
IPP90N04S4-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0402
4N0402
4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
475
90
±20
150
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2010-07-01

IPB90N04S4-02
IPB90N04S4-02
IPI90N04S4-02, IPP90N04S4-02
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 1.0 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=95µA
I DSS
V DS=40V, V GS=0V
V DS=18V, V GS=0V,
T j=85°C2)
I GSS
R DS(on)
V GS=20V, V DS=0V
V GS=10V, I D=90A
V GS=10V, I D=90A,
SMD version
40 -
-V
2.0 3.0 4.0
- 0.04 1 µA
- 1 20
- - 100 nA
- 2.3 2.5 m
- 1.9 2.1
Rev. 1.1
page 2
2010-07-01




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