OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters ...
OptiMOS(TM)3 Power-Transistor
Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
IPD096N08N3 G
IPD096N08N3 G
Product Summary VDS RDS(on),max ID
80 V 9.6 mW 73 A
Package Marking
PG-TO252-3 096N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=46 A, R GS=25 W
Gate source
voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
73 52 292 90 ±20 100 -55 ... 175 55/175/56
Unit A
mJ V W °C
2014-05-19
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area4)
IPD096N08N3 G
min.
Values typ.
Unit max.
- - 1.5 K/W - - 75 - - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gat...
