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Power-Transistor. IPD096N08N3G Datasheet



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Power-Transistor. IPD096N08N3G Datasheet








IPD096N08N3G Datasheet PDF





IPD096N08N3G Datasheet PDF


Part Number

IPD096N08N3G

Description

Power-Transistor

Feature OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC conve rters • Excellent gate charge x R DS( on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb -free plating; RoHS compliant • Quali fied according to JEDEC1) for target ap plications • Halogen-free according t o IEC61249-2-21 Type IPD096N08N3.
Manufacture

Infineon Technologies

Datasheet
Download IPD096N08N3G Datasheet

IPD096N08N3G












Part Number

IPD096N08N3G

Description

Power-Transistor

Feature OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC conve rters • Excellent gate charge x R DS( on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb -free plating; RoHS compliant • Quali fied according to JEDEC1) for target ap plications • Halogen-free according t o IEC61249-2-21 Type IPD096N08N3.
Manufacture

Infineon Technologies

Datasheet
Download IPD096N08N3G Datasheet

IPD096N08N3G



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