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IPD135N08N3G Datasheet

Part Number IPD135N08N3G
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD135N08N3G DatasheetIPD135N08N3G Datasheet (PDF)

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPD135N08N3 G IPD135N08N3 G Product Summary VDS RDS(on),max ID 80 V 13.5 mW 45 A Package Marking PG-TO-252-3 135N08N Maximum ratings, a.

  IPD135N08N3G   IPD135N08N3G






Part Number IPD135N08N3
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD135N08N3G DatasheetIPD135N08N3 Datasheet (PDF)

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPD135N08N3 G IPD135N08N3 G Product Summary VDS RDS(on),max ID 80 V 13.5 mW 45 A Package Marking PG-TO-252-3 135N08N Maximum ratings, a.

  IPD135N08N3G   IPD135N08N3G







Part Number IPD135N08N3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPD135N08N3G DatasheetIPD135N08N3 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipat.

  IPD135N08N3G   IPD135N08N3G







Power-Transistor

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPD135N08N3 G IPD135N08N3 G Product Summary VDS RDS(on),max ID 80 V 13.5 mW 45 A Package Marking PG-TO-252-3 135N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 Value Unit 45 A 39 180 50 mJ ±20 V 79 W -55 ... 175 °C 55/175/56 2014-05-19 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area4) IPD135N08N3 G min. Values typ. Unit max. - - 1.9 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (B.


2015-07-14 : IKW40N120H3    6N136    6N135    6N136    6N136    6N135    CE7660    FMX32S    TS12N20CS    TS12N30CS   


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