Type
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Type
OptiMOS®3 Power-Transistor
Features Fast switching
MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant
Type
IPD160N04L G
Product Summary V DS R DS(on),max ID
IPD160N04L G
40 V 16 mΩ 30 A
Package Marking
PG-TO252-3 160N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source
voltage 1) J-STD20 and JESD22
ID
I D,pulse I AS E AS V GS
V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
T C=25 °C T C=25 °C I D=30 A, R GS=25 Ω
Value 30 23 28
20
210 30 5 ±20
Unit A
mJ V
Rev. 1.0
page 1
2007-12-06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
IEC climatic category; DIN IEC 68-1
IPD160N04L G
Value 31
-55 ... 175 55/175/56
Unit W °C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm² cooling area4)
-
- 4.9 K/W - 75 - 50
Electrical characteristics, at T j=25 °C, unless otherwise spe...
