Type
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology ...
Type
OptiMOS(TM)3 Power-Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications
Type
IPD220N06L3 G
IPD220N06L3 G
Product Summary V DS R DS(on),max ID
60 V 22 mΩ 30 A
Package Marking
PG-TO-252-3 220N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω
Gate source
voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Value
30 21 120 13 ±20 36 -55 ... 175 55/175/56
Unit A
mJ V W °C
Rev. 2.0
page 1
2008-12-09
IPD220N06L3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm² cooling area4)
min.
Values typ.
Unit max.
- - 4.2 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate thresh...
