IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 25 mW 35 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JED...
