OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
OptiMOS®-T2 Power-Transistor
Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPD25N06S4L-30
Product Summary VDS RDS(on),max ID
60 V 30 mW 25 A
PG-TO252-3-11
Type IPD25N06S4L-30
Package
Marking
PG-TO252-3-11 4N06L30
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source
voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=12.5A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 25
17
92 12 25 ±16 29 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.1
page 1
2015-10-07
IPD25N06S4L-30
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, d...
