IPD30N03S2L-20

IPD30N03S2L-20 OptiMOS® Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Product Summary V DS R DS(on),max ID 30 20 30 V mΩ A PG-TO252-3-11 Type IPD30N03S2L-20 Package PG-TO252-3-11 Marking 2N03L20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=30A Value 30 30 120 70 ±20 60 -55 ... +175 55/175/56 mJ V W °C Unit A Rev. 1.0 page 1 2006-07-18 IPD30N03S2L-20 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=23 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-st...