OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very lo...
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G
Product Summary V DS R DS(on),max (TO252) ID
100 V 49 mΩ 20 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Type
IPB50CN10N G
IPD49CN10N G
IPI50CN10N G
IPP50CN10N G
Package Marking
PG-TO263-3 50CN10N
PG-TO252-3 49CN10N
PG-TO262-3 50CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=20 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C
Gate source
voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
PG-TO220-3 50CN10N
Value 20 14 80 29
6
±20 44 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
Rev. 1.04
page 1
2008-03-10
Downloaded from Elcodis.com electronic components distributor
IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal res...
