IPD50N03S2L-06

OptiMOS® Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested IPD50N03S2L-06 Product Summary V DS R DS(on),max ID 30 V 6.4 mΩ 50 A PG-TO252-3-11 Type IPD50N03S2L-06 Package Marking PG-TO252-3-11 PN03L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 200 250 ±20 136 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2006-07-18 IPD50N03S2L-06 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.1 K/W - - 100 - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - 8V Gate threshold voltage V GS(th) V DS=V GS, I D=85 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=30 V, V ...