IPD50N03S4L-06

OptiMOS®-T2 Power-Transistor N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested IPD50N03S4L-06 Product Summary V DS R DS(on),max ID 30 V 5.5 mW 50 A PG-TO252-3-11 Type IPD50N03S4L-06 Package Marking PG-TO252-3-11 4N03L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 50 50 200 36 50 ±16 56 -55 ... +175 55/175/56 Unit A mJ A V W °C - Rev. 1.1 page 1 2010-10-05 Parameter IPD50N03S4L-06 Symbol Conditions min. Values typ. Unit max. Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) - - 2.7 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=20µA I DSS V DS=30V, V GS=0V, T j=25°C V DS=30V, V GS=0V, T j=125°C...