IPD50N04S3-09

OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested IPD50N04S3-09 Product Summary V DS R DS(on),max ID 40 V 9 mΩ 50 A PG-TO252-3-11 Type IPD50N04S3-09 Package Marking PG-TO252-3-11 3N0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=25 A Avalanche current, single pulse I AS Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Rev. 1.1 page 1 Value 50 43 200 140 50 ±20 63 -55 ... +175 55/175/56 Unit A mJ A V W °C 2009-11-03 IPD50N04S3-09 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 2.4 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=28 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 µA Gate-source leakag...