OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested
IPD50N06S2-14
Product Summary V DS R DS(on),max (SMD version) ID
55 V 14.4 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S2-14
Package
Marking
PG-TO252-3-11 PN0614
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain .
Power Transistor
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested
IPD50N06S2-14
Product Summary V DS R DS(on),max (SMD version) ID
55 V 14.4 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S2-14
Package
Marking
PG-TO252-3-11 PN0614
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=50A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 501)
49
200 240 ±20 136 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.1
page 1
2008-10-21
IPD50N06S2-14
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.1 K/W - - 100 - - 75 - - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=80 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=.