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IPD50N06S2L-13 Datasheet

Part Number IPD50N06S2L-13
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPD50N06S2L-13 DatasheetIPD50N06S2L-13 Datasheet (PDF)

OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD50N06S2L-13 Product Summary V DS R DS(on),max (SMD version) ID 55 V 12.7 mΩ 50 A PG-TO252-3-11 Type IPD50N06S2L-13 Package Marking PG-TO252-3-11 PN06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Co.

  IPD50N06S2L-13   IPD50N06S2L-13






Power Transistor

OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD50N06S2L-13 Product Summary V DS R DS(on),max (SMD version) ID 55 V 12.7 mΩ 50 A PG-TO252-3-11 Type IPD50N06S2L-13 Package Marking PG-TO252-3-11 PN06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 200 240 ±20 136 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2006-07-18 IPD50N06S2L-13 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.1 K/W - - 100 - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS .


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