IPD50N06S3-07
OptiMOS®-T Power-Transistor
Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 ...
IPD50N06S3-07
OptiMOS®-T Power-Transistor
Features N-channel - Normal Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested
Product Summary V DS R DS(on),max ID
55 V 6.9 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S3-07
Package
Marking
PG-TO252-3-11 3N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A,
Avalanche current, single pulse
I AS
Gate source
voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 50
50
200 710 50 ±20 136 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.2
page 1
2009-06-15
IPD50N06S3-07
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area4)
min.
Values typ.
Unit max.
- - 1.1 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
Gate threshold
voltage
V GS(th) V DS=V GS, I D=80 µA 2.1 3.0
-V 4
Zero gate
voltage drain current
I DSS
V DS=55 V, V GS=0 V, T ...