OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1...
OptiMOS®-T Power-Transistor
Features N-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
IPD50N06S3L-13
Product Summary V DS R DS(on),max ID
55 V 13 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S3L-13
Package
Marking
PG-TO252-3-11 3N06L13
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse
I D,pulse E AS I AS
T C=25 °C I D=25 A
Gate source
voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 50
37
200 130 50 ±16 65 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.2
page 1
2009-05-20
IPD50N06S3L-13
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area4)
min.
Values typ.
Unit max.
- - 2.3 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold
voltage
V GS(th) V DS=V GS, I D=30 µA 1.2 1.7 2.2
Zero gate
voltage drain current
I DSS
V DS=55 V, V GS=0 V, T j=25 °C
-
0.01
1 ...
