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IPD50P04P4-13 Datasheet

Part Number IPD50P04P4-13
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPD50P04P4-13 DatasheetIPD50P04P4-13 Datasheet (PDF)

Type IPD50P04P4-13 OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 12.6 mW -50 A PG-TO252-3-313 Tab 1 3 Gate pin 1 Source pin 3 Type IPD50P04P4-13 Package Marking PG-TO252-3-313 4P0413 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Conti.

  IPD50P04P4-13   IPD50P04P4-13






Power Transistor

Type IPD50P04P4-13 OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 12.6 mW -50 A PG-TO252-3-313 Tab 1 3 Gate pin 1 Source pin 3 Type IPD50P04P4-13 Package Marking PG-TO252-3-313 4P0413 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=-25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Drain pin 2/Tab Value -50 -45 -200 18 -50 ±20 58 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.3 page 1 2019-07-16 IPD50P04P4-13 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Values Unit min. typ. max. - - 2.6 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= -.


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