IPD50P04P4L-11
OptiMOS®-P2 Power-Transistor
Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL...
IPD50P04P4L-11
OptiMOS®-P2 Power-Transistor
Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection
Product Summary V DS R DS(on),max ID
-40 V 10.6 mW -50 A
PG-TO252-3-313
Type IPD50P04P4L-11
Package
Marking
PG-TO252-3-313 4P04L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=-10V1)
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D= -25A
Avalanche current, single pulse
I AS -
Gate source
voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
-50
-40
-200 18 -50 ±163) 58 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.0
page 1
06.08.2010
IPD50P04P4L-11
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area4)
min.
Values typ.
Unit max.
- - 2.6 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA V ...
