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IPD600N25N3G Datasheet

Part Number IPD600N25N3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet IPD600N25N3G DatasheetIPD600N25N3G Datasheet (PDF)

IPD600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G 250 V 60 mW 25 A Package Marking PG-TO2.

  IPD600N25N3G   IPD600N25N3G






Part Number IPD600N25N3
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD600N25N3G DatasheetIPD600N25N3 Datasheet (PDF)

IPD600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G 250 V 60 mW 25 A Package Marking PG-TO25.

  IPD600N25N3G   IPD600N25N3G







Part Number IPD600N25N3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPD600N25N3G DatasheetIPD600N25N3 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 100 PD Total Dissipati.

  IPD600N25N3G   IPD600N25N3G







Power Transistor

IPD600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G 250 V 60 mW 25 A Package Marking PG-TO252-3 600N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=25 A, R GS=25 W Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 Value 25 18 100 210 10 ±20 136 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C 2011-07-14 IPD600N25N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.1 K/W - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage dr.


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