isc N-Channel MOSFET Transistor
IPD65R380E6,IIPD65R380E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.38Ω ·...
isc N-Channel
MOSFET Transistor
IPD65R380E6,IIPD65R380E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
650
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
10.6
IDM
Drain Current-Single Pulsed
29
PD
Total Dissipation @TC=25℃
83
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.5 62
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor
IPD65R380E6,IIPD65R380E6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=0.32mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=3.2A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=650V; VGS= 0V
VSD
Diode forward
voltage
IF=4.9A, VGS = 0V
MIN TYP MAX UNIT
650
V
2.5
3.5
V
0.38
Ω
0.1
μA
1
μA
0.9
V
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