MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor IPx65R600E6
Data...
MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor IPx65R600E6
Data Sheet
Rev. 2.2, 2016-08-04
Power Management & Multimarket
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6 IPA65R600E6
1 Description
CoolMOSTM is a revolutionary technology for high
voltage power
MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ
MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ
MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
Extremely low losses due to very low F O M R dson*Qg and E oss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2)
Appl...