IPD65R650CE,IPA65R650CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvolta...
IPD65R650CE,IPA65R650CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhigh
voltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunction
MOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.
Features
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:For
MOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. Note2:*65CE650isFullPAKmarkingonly
DPAK
tab
2 1
3
PG-TO220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
650
mΩ
ID. 10.1 A
Qg.typ
23
nC
ID,pulse
18
A
Eoss@400V
2
µJ
Type/OrderingCode IPD65R650CE IPA65R650CE
Package PG-TO 252 PG-TO 220 FullPAK
Marking
R...