OptiMOS™-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
OptiMOS™-T Power-Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature RoHS compliant 100% Avalanche tested
IPD70N10S3-12
Product Summary VDS RDS(on),max ID
100 V 11.1 mW 70 A
PG-TO252-3-11
Type
Package
Marking
IPD70N10S3-12
PG-TO252-3-11 QN1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1)
E AS
I D=35A
Avalanche current, single pulse
I AS
Gate source
voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 70
48
280 410 70 ±20 125 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.2
page 1
2023-06-15
IPD70N10S3-12
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area2)
min.
Values typ.
Unit max.
-
-
1.2 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (Br)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=83µA
I DSS
V DS=80V, V GS=0V, T j=25°C
V DS=80V, V...